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A 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology

Yuhua Qi, Rulong He, and Zhao Shen
Electronic Engineering College, Naval University of Engineering, PLA, Wuhan 430033, China
Abstract—A low-phase-noise, low-power Ka-band Voltage-Controlled Oscillator (VCO) using cross-coupled pair configuration is presented. The Ka-band VCO circuit uses 0.18 μm SiGe BiCMOS technology. The VCO has low phase noise of -114.6 dBc/Hz at 1 MHz offset from 32.12 GHz carrier frequency and can be tuned from 30.17 to 33.48 GHz. The figure of merit is -202.1 dBc/Hz. The power consumption of the VCO with 0.27 mm2 chip area is 1.8 mW from a 1.5 V power supply.
 
Index Terms—VCO, low power, low phase noise, SiGe BiCMOS

Cite: Yuhua Qi, Rulong He, and Zhao Shen, "A 32 GHz Low-Power Low-Phase-Noise VCO Implemented in SiGe BiCMOS Technology," Journal of Communications, vol. 12, no. 2, pp. 98-104, 2017. Doi: 10.12720/jcm.12.2.98-104
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